 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| U4285BM AM / FM - PLL Description The U4285BM is an integrated circuit in BICMOS technology for frequency synthesizers. It performs all the functions of a PLL radio tuning system and is controlled by an I2C bus. The device is designed for all frequency synthesizer applications in radio receivers, as well as RDS ( Radio Data System ) applications. Features D Reference oscillator up to 15 MHz D Two programmable 16 bit dividers adjustable from 2 to 65535 D 4 programmable switching outputs (open drain up to 15 V) D Fine tuning steps: AM FM y 1 kHz y 2 kHz D Few external component required due to integrated loop-push-pull stage for AM/FM D High signal/ noise ratio Ordering Information Extended Type Number U4285BM-AFS U4285BM-AFSG3 Package SSO20 plastic SSO20 plastic Remarks Taping according to IEC-286-3 Block Diagram SWO1 SWO2 SWO3 SWO4 5 6 7 8 OSCIN 18 Oscillator OSCOUT 19 SCL 2 I2C bus interface Phase detector Current sources 15 16 17 12 13 N-divider 1 VDD Figure 1. 20 GND1 PDAMO VA C PDFMO PDFM R-divider Switching outputs 14 PDAM SDA 3 AS FMOSC 4 9 AMOSC 11 AM/FM switch 10 GND2 95 10120 TELEFUNKEN Semiconductors Rev. A3, 14-May-97 1 (10) U4285BM Pin Description VDD SCL 1 2 3 4 5 20 19 18 17 16 GND1 OSCOUT OSCIN C VA PDAMO PDAM PDFM PDFMO AMOSC Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 Symbol VDD SCL SDA AS SWO 1 SWO 2 SWO3 SWO4 FMOSC GND 2 AMOSC PDFMO PDFM PDAM PDAMO VA C OSCIN OSCOUT GND1 Function Supply voltage I2C bus clock I2C bus data Address selection Switching output 1 Switching output 2 Switching output 3 Switching output 4 FM oscillator input Ground 2 (analog) AM oscillator input FM analogue output FM current output AM current output AM analogue output Analogue supply voltage Capacitor Oscillator input Oscillator output Ground 1 (digital) SDA AS SWO 1 SWO 2 SWO3 SWO4 FMOSC GND 2 U4285BM 6 7 8 9 10 15 14 13 12 11 95 10121 Functional Description The U4285BM is controlled via the 2-wire I2C bus. For programming there are one module address byte, two subaddress bytes and five data bytes. The module address contains a programmable address bit A 1 which with address select input AS (Pin 4) makes it possible to operate two U4285BM in one system. If bit A 1 is identical with the status of the address select input AS, the chip is selected . The subaddress determines which one of the data bytes is transmitted first. If subaddress of R-divider is transmitted, the sequence of the next data bytes is DB 0 (Status), DB 1 and DB 2. If subaddress of N-divider is transmitted, the sequence of the next data bytes is DB 3 and DB 4. The bit organisation of the module address, subaddress and 5 data bytes are shown in figure 2. Each transmission on the I2C bus begins with the "START"- condition and has to be ended by the "STOP"condition (see figure 3). The integrated circuit U4285BM has two separate inputs for AM and FM oscillator. Pre-amplified AM and FM signals are fed to the 16 bit N-divider via AM/FM switch. AM/FM switch is controlled by software. Tuning steps can be selected by 16 bit R-divider. Further there is a digital memory phase detector. There are two separate current sources for AM and FM amplifier (charge pump) as given in electrical characterisitics. It allows independent adjustment of gain, whereby providing high current for high speed tuning and low current for stable tuning. 2 (10) TELEFUNKEN Semiconductors Rev. A3, 14-May-97 U4285BM Bit Organization Module address MSB 1 A7 1 A6 0 A5 0 A4 1 A3 0 A2 0/1 A1 LSB 0 A0 Subaddress (R-divider) X X X 0 0 1 X X Subaddress (N-divider) X X X X 1 1 X X Data byte 0 (Status) MSB SWO1 D7 SWO2 D6 SWO3 D5 SWO4 D4 AM/ FM D3 PD ANA D2 PD POL D1 LSB PD CUR D0 Data byte 1 215 R-divider 28 Data byte 2 27 R-divider 20 Data byte 3 215 N-divider 28 Data byte 4 27 N-divider 20 AM/FM PD - ANA PD - POL PD - CUR LOW FM-operation PD analog Negative polarity Output current 2 Figure 2. HIGH AM-operation TEST Positive polarity Output current 1 TELEFUNKEN Semiconductors Rev. A3, 14-May-97 3 (10) U4285BM Transmission Protocol MSB S A7 Address A0 LSB A Subaddress R-divider A Data 0 A Data 1 A Data 2 A P MSB S A7 S = Start Address LSB A A0 P = Stop Subaddress N-divider A Data 3 A Data 4 A A P A = Acknowledge Figure 3. Absolute Maximum Ratings Parameters Supply voltage Pin 1 Input voltage Pins 2, 3, 4, 9, 11, 18 and 19 Output current Pins 3, 5, 6, 7 and 8 Output drain voltage Pins 5, 6, 7 and 8 Analogue supply voltage Pin 16 with 220 W seriell resistance 2 minutes 1 Output current Pins 12 and 15 Ambient temperature range Storage temperature range Junction temperature Electrostatic handling (modified MIL STD 883 D method 3015.7: all supply pins connected together) 1 "V Symbol VDD VI IO VOD VA VA IAO Tamb Tstg Tj ESD Value -0.3 to +6 -0.3 to VDD + 0.3 -1 to +5 15 6 to 15 24 -1 to +20 -30 to +85 -40 to +125 125 1000 Unit V V mA V V V mA _C _C _C V corresponding our application circuit (page 8) Thermal Resistance Parameters Junction ambient Symbol RthJA Value 160 Unit K/W 4 (10) TELEFUNKEN Semiconductors Rev. A3, 14-May-97 U4285BM Electrical Characteristics VDD = 5 V, VA = 10 V, Tamb = 25C, unless otherwise specified Test conditions / Pin Symbol Pin 1 VDD AM-mode Pin 1 IDD FM-mode FM input sensitivity, RG = 50 W FMOSC fi = 70 to 120 MHz Pin 9 VSFM fi = 160 MHz Pin 9 VSFM AM input sensitivity, RG = 50 W AMOSC fi = 0.6 to 35 MHz Pin 11 VSAM Oscillator input sensitivity, RG = 50 W OSCIN fi = 0.1 to 15 MHz Pin 18 VSOSC Switching output SWO 1, SWO 2, SWO 3, SWO 4 (open drain) Output voltage Pins 5, 6, 7 and 8 LOW IL = 1 mA VSWOL Output leakage current Pins 5, 6, 7 and 8 HIGH V5, V6, V7, V8 = 10 V IOHL Phase detector PDFM Output current 1 Pin 13 PDFM Output current 2 Pin 13 PDFM Leakage current Pin 13 PDFML Phase detector PDAM Output current 1 Pin 14 PDAM Output current 2 Pin 14 PDAM Leakage current Pin 14 PDAMParameters Supply voltage Quiescent supply current Min. 4.5 Typ. 5.0 4.0 4.0 Max. 5.5 7.0 7.0 Unit V mA 40 150 40 100 mVrms mVrms mVrms mVrms 100 400 100 mV nA "I "I "I "I "I "I 1600 400 2000 500 2400 600 20 240 60 20 mA mA nA 160 40 200 50 mA mA nA L Analogue output PDFMO, PDAMO Saturation voltage Pins 12 and 15 LOW I = 15 mA HIGH I2C bus SCL, SDA, AS Input voltage Pins 2, 3 and 4 HIGH LOW Output voltage Pin 3 Acknowledge LOW ISDA = 3 mA Clock frequency Pin 2 Rise time SDA, SCL Pins 2 and 3 Fall time SDA, SCL Pins 2 and 3 Period of SCL Pin 2 HIGH HIGH LOW LOW VsatL VsatH ViBUS 9.5 200 9.95 400 mV V 3.0 0 VO fSCL tr tf tH tL 4.0 4.7 VDD 1.5 0.4 100 1 300 V V V kHz ms ns ms ms TELEFUNKEN Semiconductors Rev. A3, 14-May-97 5 (10) U4285BM Parameters Setup time Start condition Data Stop condition Time space 1) Hold time Start condition DATA 1) Test conditions / Pin Symbol tsSTA tsDAT tsSTOP twSTA thSTA thDAT Min. 4.7 250 4.7 4.7 4.0 0 Typ. Max. Unit ms ms ms ms ms ns This is a space of time where the bus must be free from data transmission and before a new transmission can be started Bus Timing SDA twSTA tr tf thSTA SCL P S thSTA tL thDAT tH tsSTA thDAT tsSTOP P P = Stop, S = Start Figure 4. 95 10122 14 12 10 VSFM ( mV ) VSFM ( mV ) 8 6 4 2 0 20 13354 14 T = 85C 12 10 VDD = 5.5 V 5.0 V 4.5 V 8 6 4 2 0 20 13355 T = -30C VDD = 5.5 V 5.0 V 4.5 V 40 60 80 100 120 40 60 80 100 120 fiFM ( MHz ) fiFM ( MHz ) Figure 5. FM input sensitivity 6 (10) TELEFUNKEN Semiconductors Rev. A3, 14-May-97 U4285BM 100 T = 85C 100 T = -30C V SAM ( mV ) 10 V SAM ( mV ) VDD = 5.5 V 5.0 V 4.5 V 10 VDD = 5.5 V 5.0 V 4.5 V 1 0.1 13353 1.0 10.0 fiAM ( MHz ) 100.0 13356 1 0.1 1.0 10.0 fiAM ( MHz ) 100.0 Figure 6. AM input sensitivity Application Circuit 6 to 15 V 110 100 m 16 V 110 3k C6* 100 n C5 C1 * 27 p 4 MHz 20 19 18 17 16 15 27 p 100 m 6.3 V R1 * 14 * R2* C2 * 13 12 AMOSC 2.2 n FMOSC 11 C3 100 n 1 2 3 4 U4285BM 5 6 7 8 9 10 100 m 6.3 V 1n 27 5V 95 10123 C4 12 k 12 k * Values depend on the step frequency and used varicaps Figure 7. TELEFUNKEN Semiconductors Rev. A3, 14-May-97 7 (10) U4285BM Recommendations for Applications D C3 = 100 nF should be very close to Pin 1 (VDD) and Pin 20 (GND 1) D 4 MHz crystal must be very close to Pin 18 and Pin 19 D Components of the charge pump (C1/R1 for AM and C2/R2 for FM) should be very close to Pin 14 with respect to Pin 13. D GND 2 (Pin 10 - analogue ground) and GND 1 (Pin 20 - digital ground) must be connected according to figure 8 PCB-Layout GND 20 19 18 17 16 15 C1 14 13 C2 12 11 C4 VDD C3 1 2 3 4 5 6 7 8 9 10 95 10124 Figure 8. 8 (10) TELEFUNKEN Semiconductors Rev. A3, 14-May-97 U4285BM Package Information Package SSO20 Dimensions in mm 6.75 6.50 5.7 5.3 4.5 4.3 1.30 0.25 0.65 5.85 20 11 0.15 0.05 0.15 6.6 6.3 technical drawings according to DIN specifications 13007 1 10 TELEFUNKEN Semiconductors Rev. A3, 14-May-97 9 (10) U4285BM Ozone Depleting Substances Policy Statement It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs). The Montreal Protocol ( 1987) and its London Amendments ( 1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 10 (10) TELEFUNKEN Semiconductors Rev. A3, 14-May-97 |
Price & Availability of U4285BM
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |